deposition pressure

英 [ˌdepəˈzɪʃn ˈpreʃə(r)] 美 [ˌdepəˈzɪʃn ˈpreʃər]

网络  沉积压力

化学



双语例句

  1. Effects of Deposition Pressure on Nanocrystalline Silicon Thin Film by Magnetron Sputtering
    沉积压力对磁控溅射纳米硅薄膜结构和性能影响
  2. Study of Structure and Performance of Unbalanced Magnetron Sputtering MoS_2-Ti Coating Affected by Deposition Pressure
    沉积压力对非平衡磁控溅射沉积MoS2-Ti复合薄膜的结构与性能影响研究
  3. Effect of Deposition Pressure on Structural and Optical Properties of ZnO Films
    沉积气压对ZnO薄膜的结构与光学性能影响
  4. Fig2 correlation between deposition oxygen pressure and integrated pl intensity.
    图2积分pl强度与沉积氧气压力的关系。
  5. In addition, the results also demonstrate that the transition zone shifts to the higher silane concentration with increasing discharge power or decreasing deposition pressure.
    另外,研究结果也给出非晶/微晶过渡区随着辉光功率的提高和沉积气压的降低向高硅烷浓度方向转移。
  6. Effects of eight parameters on electrical and optical properties of the films were analyzed in detail. Three factors including deposition pressure, flow ratio of argon to oxygen and annealing temperature had greatly influence on conductance of ITO films.
    测试了薄膜的方阻和透过率,分析了8个工艺参数对薄膜电光特性的影响,其中沉积气压、氩氧流量比和退火温度的影响最大。
  7. A Study on the Influence of Deposition Pressure on the Properties of the μ c-Si ∶ H Films Fabricated by VHF-PECVD
    气压对VHF-PECVD制备的μc-Si∶H薄膜特性影响的研究
  8. Influences of deposition pressure on mw& pcvd diamond film
    沉积气压对MW-PCVD制备金刚石薄膜的影响
  9. The deposition rate dependence of source temperature, substrate temperature and deposition pressure has been studied systematically.
    系统研究了源温度,衬底温度,环境气压与沉积速率的关系;
  10. It is also found that High C/ F atom ratio for source gases, low deposition pressure and high microwave input power contribute to enhancement of cross-linked structure in a-C: F: H films and thus improve the thermal stability of the films.
    实验中还发现,源气体较高的碳氟原子比、较低的沉积气压和较高的微波输入功率有助于a-C:F:H薄膜交联结构的增强,因而有利于改善薄膜的热稳定性。
  11. The deposition rate increases obviously with the increase of deposition pressure and the addition of H_2.
    沉积速率随沉积压力的升高以及H2的加入而急剧增加。
  12. The growth rate of samples enhanced with the increasing of deposition pressure.
    随着沉积气压的逐渐增大,样品的沉积速率也逐渐增大;
  13. The Influence of High-frequency Dischange-aided Sputtering Deposition and Argon Pressure on the Structure and Magnetic Properties of Co/ Cu Multilayers
    高频辅助溅射沉积及氩气压对Co/Cu磁性多层膜结构和性能的影响
  14. The alterable sputter parameters including deposition pressure, oxygen flow, vapor partial pressure, DC power and substrate temperature were initialized by orthotropic experiment.
    使用正交试验法初步确定五个可变溅射参数:溅射压强、O2流量、H2O分压、溅射功率、衬底温度。
  15. The effect of the deposition gas pressure of multilayers on the ability of X-ray reflectance
    溅射气压对X射线多层膜反射率的影响
  16. Transmittance increases in turn with the rising of deposition pressure raise.
    透过率随气压的升高而依次增大。
  17. Also de-posited with high deposition pressure or low deposition power, the film resistivi-ty may be multiple relations of magnitude to the lowest film resistivity. And wit-hin a low substrate temperature range ( T200 ℃), the film had the little differen-ce of resistivity.
    高的工作气压和低的沉积功率沉积的薄膜电阻率大能和最低的电阻率呈数量级的倍数关系;在较低衬底温度范围内(T200℃)沉积的电阻率变化不大。
  18. There is no much differents between Transparency spectra and PL spectra of ZnO thin films with different deposition pressure because we think all optical properties are come from the effects of electromagnetic radiation in electrons.
    我们认为所有的光学性质都来源于物质电子的电磁辐射作用,所以不同沉积气压下ZnO薄膜的PL谱大致类似。
  19. The effect of power discharge characteristic, deposition pressure, and substrate negative bias voltage on the structure and mechanical properties of CrN coatings were studied.
    本论文采用高功率脉冲磁控溅射技术制备CrN涂层,并重点研究电源放电特性、气压、脉冲电压、基体偏压对CrN涂层的结构和力学性能的影响。
  20. Under high deposition pressure condition, the use of higher silane concentration and smaller silane gas can rapidly prepare μ c-Si: H, and get high gas utilization. 3.
    在高沉积气压条件下,利用较高的硅烷浓度和较小的气体总流量可以高速制备出微晶硅薄膜,且气体利用率高。
  21. The processing parameters such as nitrogen flux, negative bias voltage, deposition pressure have a noticeable effect on hardness, color, structure of the film. A proper and scientific control of processing parameters can improve the properties of TiN films.
    而氮气流量、负偏压、沉积总压等常规工艺参数明显影响着薄膜相结构、色泽、以及硬度等,合理控制工艺参数,能够改善薄膜的性能。
  22. Effects of flow ratios, microwave power and deposition pressure on surface morphology, structure and growth rate of amorphous carbon films were studied.
    主要研究了反应气体流量比、微波功率、沉积气压实验参数对非晶碳膜表面形貌、结构性能以及生长速率的影响。
  23. Then we studied the impact of deposition conditions ( factors like deposition pressure and reaction time etc.) on the deposition speed, composing and mechanical property and film quality etc. of the films.
    研究了沉积条件(沉积压力、反应时间等因素)对薄膜沉积速率、组成成份、机械性质以及薄膜品质等方面的影响。
  24. Analysis of the background, vacuum, sputtering deposition time pressure, oxygen and compressed air flow experiment parameters and material characteristics.
    分析了本底真空,溅射气压,沉积时间,氧气和压气流量等实验参数与材料特征之间的关系。
  25. With adjusting the deposition pressure and heat treatment temperature, The CIGS thin film absorption layer and CdS thin film buffer layer were prepared on glass substrates by pulsed laser deposition ( PLD), respectively.
    采用脉冲激光沉积(PLD)法在玻璃衬底上,通过调节真空室气压和热处理温度制备铜铟镓硒(CIGS)薄膜吸收层和硫化镉(CdS)薄膜缓冲层。